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• W3133907153 abstract "Integration of an enhancement-mode (E-mode) metal-insulator-semiconductor high-electron-mobility transistor (MIS-HEMT) with a high-performance lateral Schottky barrier controlled Schottky (LSBS) rectifier in a compact layout is fabricated on an ultrathin-barrier AlGaN/GaN heterostructure grown on Si substrate. The state-of-the-art reverse conduction voltage (V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>rev</sub> ) of 0.455 V was achieved in the monolithic integrated E-mode power device with a threshold voltage of 1.55 V. V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>rev </sub> exhibited a tiny temperature variation of 0.66% from 0 °C to 150 °C compared with that of 157% for the controlled E-mode HEMT." @default.
• W3133907153 created "2021-03-15" @default.
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• W3133907153 date "2021-04-01" @default.
• W3133907153 modified "2023-10-15" @default.
• W3133907153 title "Monolithic Integrated Normally OFF GaN Power Device With Antiparallel Lateral Schottky Barrier Controlled Schottky Rectifier" @default.
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• W3133907153 doi "https://doi.org/10.1109/ted.2021.3058114" @default.
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