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- W3134174927 endingPage "176" @default.
- W3134174927 startingPage "113" @default.
- W3134174927 abstract "This chapter provides an overview of concepts pertaining to point defects and dislocations in GaAs that are relevant to laser degradation. An introduction to the thermodynamics of simple native point defects in GaAs emphasizes the importance of process conditions in controlling their concentration, particularly the consequences of doping via the Fermi level effect. An overview of the structure and properties of dislocations in GaAs is also presented, highlighting the elementary steps of dislocations glide and climb and why they might segregate point defects and impurities. These concepts are applied to understand the current strategies for lattice-mismatched growth of GaAs on silicon. While the defect processes mentioned so far are all thermally activated, the chapter concludes with a review of recombination-enhanced defect reactions in GaAs and how nonradiative recombination acts as a catalyst for enhanced dislocation growth in lasers. These basic ideas allow an understanding of the strategies to combat degradation in semiconductor lasers." @default.
- W3134174927 created "2021-03-15" @default.
- W3134174927 creator A5011906094 @default.
- W3134174927 date "2021-01-01" @default.
- W3134174927 modified "2023-09-27" @default.
- W3134174927 title "Materials science of defects in GaAs-based semiconductor lasers" @default.
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