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- W3134510478 abstract "Abstract A scalable eletrothermal model is necessary for a high‐power amplifier design for accurate accounting of thermal effects. Toward this end, this study presents a scalable large‐signal model of gallium‐nitride (GaN) high‐electron‐mobility transistors (HEMTs) on diamond substrates. First, a three‐dimensional (3D) thermal analysis model was established. Then, a modified eletrothemal expression was proposed to predict thermal effects including scalability. For validation, the proposed model was implemented into quasi‐physics zone division (QPZD) large‐signal model. Results show that the proposed model accurately predicts the I–V curves of devices with different gate widths, gate fingers, and ambient temperatures. Moreover, the results of the model are consistent with on‐wafer measurements of 2 × 125, 4 × 125, and 10 × 50 μm of GaN‐on‐diamond HEMTs, indicating that the proposed model accurately predicts the DC– IV curves, scattering parameters, and large‐signal performance. The findings of this study can be useful for designing microwave diamond–GaN HEMT circuits." @default.
- W3134510478 created "2021-03-15" @default.
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- W3134510478 date "2021-02-25" @default.
- W3134510478 modified "2023-10-04" @default.
- W3134510478 title "A scalable electrothermal model using a three‐dimensional thermal analysis model for GaN‐on‐diamond high‐electron‐mobility transistors" @default.
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- W3134510478 doi "https://doi.org/10.1002/jnm.2875" @default.
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