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- W3134784275 abstract "Abstract This paper presents a model for determining the full three dimensional etch rate behavior of bulk wet etching of silicon from experimentally determined etch rates of four principal planes: (100), (110), (111), and (311). The etch rate for an arbitrary plane is expressed in terms of the measured planes. The model shows excellent agreement with both experimental measurements and values reported in the literature. For MEMS CAD to be able to accurately predict etched shapes, a high quality 3D model of etch rates such as the one reported here is required." @default.
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- W3134784275 date "1996-08-18" @default.
- W3134784275 modified "2023-09-24" @default.
- W3134784275 title "Etch Rate Modeling in MEMS Design" @default.
- W3134784275 doi "https://doi.org/10.1115/96-detc/dfm-1310" @default.
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