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- W3134896652 abstract "The limited investigations of the optical properties of HgTe nanocrystal (NC) thin films have reached a bottleneck for the electromagnetic design of devices. Using broadband ellipsometry, we determine the refractive index (n) and the extinction coefficient (k) for a series of HgTe NC films relevant for infrared sensing applications. Electromagnetic simulations reveal that the n value of HgTe NC thin films can conveniently be approximated by its mean spectral value n=2.35 ± 0.15. We then use this complex optical index to design a diode with (i) a reduced amount of Hg containing material (thin film < 150 nm) and (ii) a thickness of the device better-matched with the carrier diffusion length. We demonstrate that introducing an aluminum grating onto the transparent conductive electrode leads to an enhanced absorption while reinforcing the work-function difference between the two electrodes. Broadband (≈ 1 µm), non-polarized and strong absorption up to 100% is designed. This leads to a responsivity of 0.2 A.W-1 and a detectivity of 2x10 10 Jones for 2 µm cutoff wavelength at room-temperature, while the time response is as short as 110 ns." @default.
- W3134896652 created "2021-03-15" @default.
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- W3134896652 date "2021-03-05" @default.
- W3134896652 modified "2023-10-18" @default.
- W3134896652 title "Complex Optical Index of HgTe Nanocrystal Infrared Thin Films and Its Use for Short Wave Infrared Photodiode Design" @default.
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- W3134896652 doi "https://doi.org/10.1002/adom.202002066" @default.
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