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- W31349084 abstract "Hydrostatic pressure increases the direct band gap of III-V semiconductors and decreases the sub-band gaps to the conduction band satellite minima. By contrast uniaxial stress removes the cubic symmetry of the lattice and can significantly alter the properties of the valence band which is relatively insensitive to hydrostatic pressure. In this paper we consider how these effects can be applied to a variety of semiconductor lasers. Hydrostatic pressure tunes the operating wavelength of Fabry-Perot lasers. On the other hand, in distributed feedback (DFB) lasers, the wavelength is held almost constant against changes in pressure by the period of grating. Here we show how measurements of the threshold current with pressure in these different structures give information about the internal loss mechanisms occuring in long wavelength devices (1.3–1.65μm) which are responsible for the To problem. Having characterised these mechanisms we suggest laser structures with inbuilt strain in quantum well structures which should have greatly improved performance. Pressure measurements on GaAs lasers indicate that there are no significant optoelectronic loss mechanisms in standard heterostructure devices or quantum well lasers with wide wells. This is not the case for narrow well devices where considerable losses can occur particularly at high pressure. A model for this effect is tentatively suggested." @default.
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- W31349084 date "1989-01-01" @default.
- W31349084 modified "2023-09-23" @default.
- W31349084 title "Characterization and Design of Semiconductor Lasers Using Strain" @default.
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- W31349084 doi "https://doi.org/10.1007/978-1-4757-0770-0_25" @default.
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