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• W3135054414 abstract "In this paper, a compact model for the double-gate Reconfigurable Field-Effect Transistor (RFET) is presented. Firstly, the physics-based surface potential model is derived by solving Poisson's equation at different channel regions. Then an explicit expression of drain current is analytically obtained based on the theory of band-to-band tunneling at the Schottky junction. The proposed model shows excellent agreement with TCAD simulations which have been calibrated with experimental data. Finally, the compactible model is implemented in Verilog-A language without convergence problem, and proven by the RFET-based logic circuit." @default.
• W3135054414 created "2021-03-15" @default.
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• W3135054414 date "2021-01-01" @default.
• W3135054414 modified "2023-09-26" @default.
• W3135054414 title "A Physic-Based Explicit Compact Model for Reconfigurable Field-Effect Transistor" @default.
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• W3135054414 doi "https://doi.org/10.1109/access.2021.3064961" @default.
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