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- W3135142755 abstract "Highly textured ZnO thin films were successfully grown on Si(111) by atomic layer deposition using an epitaxial AlN buffer layer at deposition temperatures between 100 and 300 °C. X-ray diffraction analysis proves an epitaxial relationship of ZnO[0001]//AlN[0001] and ZnO[112¯0]//AlN[112¯0]. Omega scans of the (0002) and (101¯0) reflections of ZnO demonstrate an improving crystalline quality for increasing deposition temperatures. An additional thermal postannealing step at 800 °C is found to be beneficial to further improve the crystal structure." @default.
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- W3135142755 date "2021-03-08" @default.
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- W3135142755 title "Epitaxial growth of highly textured ZnO thin films on Si using an AlN buffer layer by atomic layer deposition" @default.
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