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• W3135278008 endingPage "010037" @default.
• W3135278008 startingPage "010037" @default.
• W3135278008 abstract "Abstract Progressing miniaturization and the development of semiconductor integrated devices ask for advanced characterizations of the different device components with ever-increasing accuracy. Particularly in highly doped layers, a fine control of local conduction is essential to minimize access resistances and optimize integrated devices. For this, electrical Atomic Force Microscopy (AFM) are useful tools to examine the local properties at nanometric scale, for the fundamental understanding of the layer conductivity, process optimization during the device fabrication and reliability issues. By using Scanning Capacitance Microscopy (SCM) and Scanning Spreading Resistance Microscopy (SSRM), we investigate a highly in situ doped polycrystalline silicon layer, a material where the electrical transport properties are well known. This film is deposited on a oxide layer as a passivating contact. The study of the nano-MIS (SCM) and nano-Schottky (SSRM) contacts allows to determine the distribution and homogeneity of the carrier concentration (active dopants), especially by investigating the redistribution of the dopants after an annealing step used for their activation. While the chemical analysis by Secondary Ions Mass Spectroscopy (SIMS) quantifies only the dopant concentration in the polycrystalline layer, the comparison with macroscopic characterization techniques as Hall effect measurements, supported with XRD characterization, shows that careful SCM and SSRM measurements can be used to highlight the dopant activation. This analysis gives a complete investigation of the local electrical properties of the passivating contact when the parameters (applied voltages and applied forces) of the AFM nano-contacts are correctly controlled." @default.
• W3135278008 created "2021-03-15" @default.
• W3135278008 creator A5013399131 @default.
• W3135278008 creator A5018284061 @default.
• W3135278008 creator A5031830356 @default.
• W3135278008 creator A5054206644 @default.
• W3135278008 creator A5057602568 @default.
• W3135278008 creator A5072270990 @default.
• W3135278008 creator A5081168134 @default.
• W3135278008 creator A5081513888 @default.
• W3135278008 creator A5083859434 @default.
• W3135278008 creator A5088064558 @default.
• W3135278008 date "2021-03-01" @default.
• W3135278008 modified "2023-10-18" @default.
• W3135278008 title "Dopant activity for highly in-situ doped polycrystalline silicon: hall, XRD, scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM)" @default.
• W3135278008 cites W1527838376 @default.
• W3135278008 cites W1622397300 @default.
• W3135278008 cites W1680950349 @default.
• W3135278008 cites W1968290459 @default.
• W3135278008 cites W1968544962 @default.
• W3135278008 cites W1968593047 @default.
• W3135278008 cites W1971114856 @default.
• W3135278008 cites W1975892746 @default.
• W3135278008 cites W1976139864 @default.
• W3135278008 cites W1977260580 @default.
• W3135278008 cites W1977905797 @default.
• W3135278008 cites W1992160371 @default.
• W3135278008 cites W1993523295 @default.
• W3135278008 cites W1993877537 @default.
• W3135278008 cites W1999903388 @default.
• W3135278008 cites W2000628944 @default.
• W3135278008 cites W2008361798 @default.
• W3135278008 cites W2010192092 @default.
• W3135278008 cites W2027842382 @default.
• W3135278008 cites W2031354062 @default.
• W3135278008 cites W2036140682 @default.
• W3135278008 cites W2038466938 @default.
• W3135278008 cites W2041223388 @default.
• W3135278008 cites W2043597496 @default.
• W3135278008 cites W2045315060 @default.
• W3135278008 cites W2053232252 @default.
• W3135278008 cites W2056110103 @default.
• W3135278008 cites W2074326407 @default.
• W3135278008 cites W2080240036 @default.
• W3135278008 cites W2080786710 @default.
• W3135278008 cites W2088600409 @default.
• W3135278008 cites W2088826245 @default.
• W3135278008 cites W2092725625 @default.
• W3135278008 cites W2093907176 @default.
• W3135278008 cites W2095108456 @default.
• W3135278008 cites W2134391395 @default.
• W3135278008 cites W2146604727 @default.
• W3135278008 cites W2188743012 @default.
• W3135278008 cites W2193948406 @default.
• W3135278008 cites W2219536512 @default.
• W3135278008 cites W2345810856 @default.
• W3135278008 cites W2499198125 @default.
• W3135278008 cites W2533510459 @default.
• W3135278008 cites W2560082180 @default.
• W3135278008 cites W2804597524 @default.
• W3135278008 cites W2841632835 @default.
• W3135278008 cites W2913412510 @default.
• W3135278008 cites W2962756200 @default.
• W3135278008 cites W3004938402 @default.
• W3135278008 cites W3014037857 @default.
• W3135278008 cites W3043203434 @default.
• W3135278008 doi "https://doi.org/10.1088/2632-959x/abed3e" @default.
• W3135278008 hasPublicationYear "2021" @default.
• W3135278008 type Work @default.
• W3135278008 sameAs 3135278008 @default.
• W3135278008 citedByCount "1" @default.
• W3135278008 countsByYear W31352780082022 @default.
• W3135278008 crossrefType "journal-article" @default.
• W3135278008 hasAuthorship W3135278008A5013399131 @default.
• W3135278008 hasAuthorship W3135278008A5018284061 @default.
• W3135278008 hasAuthorship W3135278008A5031830356 @default.
• W3135278008 hasAuthorship W3135278008A5054206644 @default.
• W3135278008 hasAuthorship W3135278008A5057602568 @default.
• W3135278008 hasAuthorship W3135278008A5072270990 @default.
• W3135278008 hasAuthorship W3135278008A5081168134 @default.
• W3135278008 hasAuthorship W3135278008A5081513888 @default.
• W3135278008 hasAuthorship W3135278008A5083859434 @default.
• W3135278008 hasAuthorship W3135278008A5088064558 @default.
• W3135278008 hasBestOaLocation W31352780081 @default.
• W3135278008 hasConcept C102951782 @default.
• W3135278008 hasConcept C113196181 @default.
• W3135278008 hasConcept C120665830 @default.
• W3135278008 hasConcept C121332964 @default.
• W3135278008 hasConcept C123671423 @default.
• W3135278008 hasConcept C147080431 @default.
• W3135278008 hasConcept C159985019 @default.
• W3135278008 hasConcept C160671074 @default.
• W3135278008 hasConcept C171250308 @default.
• W3135278008 hasConcept C185592680 @default.
• W3135278008 hasConcept C187921700 @default.
• W3135278008 hasConcept C191952053 @default.
• W3135278008 hasConcept C192562407 @default.
• W3135278008 hasConcept C206008964 @default.

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