Matches in SemOpenAlex for { <https://semopenalex.org/work/W3135858081> ?p ?o ?g. }
- W3135858081 abstract "Abstract TiO x -based resistive switching devices have recently attracted attention as a promising candidate for next-generation non-volatile memory devices. A number of studies have attempted to increase the structural density of resistive switching devices. The fabrication of a multi-level switching device is a feasible method for increasing the density of the memory cell. Herein, we attempt to obtain a non-volatile multi-level switching memory device that is highly transparent by embedding SiO 2 nanoparticles (NPs) into the TiO x matrix (TiO x @SiO 2 NPs). The fully transparent resistive switching device is fabricated with an ITO/TiO x @SiO 2 NPs/ITO structure on glass substrate, and it shows transmittance over 95% in the visible range. The TiO x @SiO 2 NPs device shows outstanding switching characteristics, such as a high on/off ratio, long retention time, good endurance, and distinguishable multi-level switching. To understand multi-level switching characteristics by adjusting the set voltages, we analyze the switching mechanism in each resistive state. This method represents a promising approach for high-performance non-volatile multi-level memory applications." @default.
- W3135858081 created "2021-03-15" @default.
- W3135858081 creator A5009435367 @default.
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- W3135858081 date "2021-05-10" @default.
- W3135858081 modified "2023-10-18" @default.
- W3135858081 title "Multi-level characteristics of TiOx transparent non-volatile resistive switching device by embedding SiO2 nanoparticles" @default.
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- W3135858081 doi "https://doi.org/10.1038/s41598-021-89315-z" @default.
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- W3135858081 hasPublicationYear "2021" @default.
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