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- W3136110140 abstract "Abstract Phase change materials exhibit threshold switching (TS) that establishes electrical conduction through amorphous material followed by Joule heating leading to its crystallization ( set ). However, achieving picosecond TS is one of the key challenges for realizing non-volatile memory operations closer to the speed of computing. Here, we present a trajectory map for enabling picosecond TS on the basis of exhaustive experimental results of voltage-dependent transient characteristics of Ge 2 Sb 2 Te 5 phase-change memory (PCM) devices. We demonstrate strikingly faster switching, revealing an extraordinarily low delay time of less than 50 ps for an over-voltage equal to twice the threshold voltage. Moreover, a constant device current during the delay time validates the electronic nature of TS. This trajectory map will be useful for designing PCM device with SRAM-like speed." @default.
- W3136110140 created "2021-03-29" @default.
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- W3136110140 date "2021-03-17" @default.
- W3136110140 modified "2023-09-25" @default.
- W3136110140 title "A scheme for enabling the ultimate speed of threshold switching in phase change memory devices" @default.
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- W3136110140 doi "https://doi.org/10.1038/s41598-021-85690-9" @default.
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