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- W3136131063 abstract "Abstract This report is on the electrical properties of all‐amorphous junction field‐effect transistors (JFETs) based on n ‐type zinc oxynitride (ZnON) as a channel material and room‐temperature deposited p ‐type ZnCo 2 O 4 (ZCO) as a heterojunction gate. Devices with different channel thicknesses are thereby compared. Best devices with 48 nm channel layer thickness achieve drain current on/off –ratios of 10 5 and low subthreshold swing of 134 mV dec −1 within a gate voltage sweep of less than 2 V. The channel mobility extraction is reliable for 90 nm‐thick channels yielding saturation mobility values over 50 cm 2 V −1 s −1 . For JFETs with 48 nm‐thick channels an overestimation of the saturation mobility due to deviations from the ideal transistor characteristics is determined." @default.
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- W3136131063 date "2021-03-18" @default.
- W3136131063 modified "2023-09-23" @default.
- W3136131063 title "All‐Amorphous Junction Field‐Effect Transistors Based on High‐Mobility Zinc Oxynitride" @default.
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- W3136131063 doi "https://doi.org/10.1002/aelm.202000883" @default.
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