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• W3136157274 endingPage "747" @default.
• W3136157274 startingPage "740" @default.
• W3136157274 abstract "Total-ionizing-dose (TID) effects and low-frequency noise are evaluated in advanced bulk nMOS and pMOS FinFETs with SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> /HfO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> gate dielectrics. Otherwise identical devices built with and without through-silicon via (TSV) integration exhibit threshold voltage shifts of less than 25 mV and changes in maximum transconductance of less than 1% up to 2 Mrad(SiO <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> ). TSV integration negligibly impacts threshold shifts and degradation of subthreshold swing and I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ON</sub> /I <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>OFF</sub> ratios. Similar low-frequency noise magnitudes and frequency dependencies are observed before and after TID irradiation for each device type. Effective densities of the near-interfacial electron traps responsible for the noise in the nMOS devices increase as the surface potential moves toward midgap, while effective densities of the hole traps that cause the noise in the pMOS devices increase as the surface potential moves toward the valence band edge." @default.
• W3136157274 created "2021-03-29" @default.
• W3136157274 creator A5001195247 @default.
• W3136157274 creator A5017425497 @default.
• W3136157274 creator A5018571032 @default.
• W3136157274 creator A5022728685 @default.
• W3136157274 creator A5028833616 @default.
• W3136157274 creator A5031545318 @default.
• W3136157274 creator A5049822123 @default.
• W3136157274 creator A5051895719 @default.
• W3136157274 creator A5056239229 @default.
• W3136157274 creator A5061504157 @default.
• W3136157274 creator A5083406967 @default.
• W3136157274 creator A5083591096 @default.
• W3136157274 creator A5087964931 @default.
• W3136157274 date "2021-05-01" @default.
• W3136157274 modified "2023-10-01" @default.
• W3136157274 title "Impacts of Through-Silicon Vias on Total-Ionizing-Dose Effects and Low-Frequency Noise in FinFETs" @default.
• W3136157274 cites W1540242748 @default.
• W3136157274 cites W1562009001 @default.
• W3136157274 cites W1634198957 @default.
• W3136157274 cites W1970884236 @default.
• W3136157274 cites W1979670036 @default.
• W3136157274 cites W1988752365 @default.
• W3136157274 cites W1990871707 @default.
• W3136157274 cites W1995940513 @default.
• W3136157274 cites W2014426329 @default.
• W3136157274 cites W2019035957 @default.
• W3136157274 cites W2065851146 @default.
• W3136157274 cites W2071003187 @default.
• W3136157274 cites W2074286565 @default.
• W3136157274 cites W2084199425 @default.
• W3136157274 cites W2089347488 @default.
• W3136157274 cites W2099779865 @default.
• W3136157274 cites W2102327177 @default.
• W3136157274 cites W2105340717 @default.
• W3136157274 cites W2107398534 @default.
• W3136157274 cites W2117201998 @default.
• W3136157274 cites W2122322008 @default.
• W3136157274 cites W2123143749 @default.
• W3136157274 cites W2126681496 @default.
• W3136157274 cites W2130923737 @default.
• W3136157274 cites W2131979514 @default.
• W3136157274 cites W2136114103 @default.
• W3136157274 cites W2155969312 @default.
• W3136157274 cites W2166602506 @default.
• W3136157274 cites W2170232721 @default.
• W3136157274 cites W2331606701 @default.
• W3136157274 cites W2560410485 @default.
• W3136157274 cites W2778631497 @default.
• W3136157274 cites W2797124026 @default.
• W3136157274 cites W2801708701 @default.
• W3136157274 cites W2884088843 @default.
• W3136157274 cites W2898496825 @default.
• W3136157274 cites W2996049479 @default.
• W3136157274 cites W3004576173 @default.
• W3136157274 cites W88929070 @default.
• W3136157274 doi "https://doi.org/10.1109/tns.2021.3065563" @default.
• W3136157274 hasPublicationYear "2021" @default.
• W3136157274 type Work @default.
• W3136157274 sameAs 3136157274 @default.
• W3136157274 citedByCount "8" @default.
• W3136157274 countsByYear W31361572742022 @default.
• W3136157274 countsByYear W31361572742023 @default.
• W3136157274 crossrefType "journal-article" @default.
• W3136157274 hasAuthorship W3136157274A5001195247 @default.
• W3136157274 hasAuthorship W3136157274A5017425497 @default.
• W3136157274 hasAuthorship W3136157274A5018571032 @default.
• W3136157274 hasAuthorship W3136157274A5022728685 @default.
• W3136157274 hasAuthorship W3136157274A5028833616 @default.
• W3136157274 hasAuthorship W3136157274A5031545318 @default.
• W3136157274 hasAuthorship W3136157274A5049822123 @default.
• W3136157274 hasAuthorship W3136157274A5051895719 @default.
• W3136157274 hasAuthorship W3136157274A5056239229 @default.
• W3136157274 hasAuthorship W3136157274A5061504157 @default.
• W3136157274 hasAuthorship W3136157274A5083406967 @default.
• W3136157274 hasAuthorship W3136157274A5083591096 @default.
• W3136157274 hasAuthorship W3136157274A5087964931 @default.
• W3136157274 hasConcept C115961682 @default.
• W3136157274 hasConcept C119599485 @default.
• W3136157274 hasConcept C121332964 @default.
• W3136157274 hasConcept C127413603 @default.
• W3136157274 hasConcept C154945302 @default.
• W3136157274 hasConcept C165801399 @default.
• W3136157274 hasConcept C172385210 @default.
• W3136157274 hasConcept C192562407 @default.
• W3136157274 hasConcept C197162436 @default.
• W3136157274 hasConcept C27050352 @default.
• W3136157274 hasConcept C2779283907 @default.
• W3136157274 hasConcept C41008148 @default.
• W3136157274 hasConcept C49040817 @default.
• W3136157274 hasConcept C544956773 @default.
• W3136157274 hasConcept C99498987 @default.
• W3136157274 hasConceptScore W3136157274C115961682 @default.
• W3136157274 hasConceptScore W3136157274C119599485 @default.
• W3136157274 hasConceptScore W3136157274C121332964 @default.
• W3136157274 hasConceptScore W3136157274C127413603 @default.
• W3136157274 hasConceptScore W3136157274C154945302 @default.

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