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- W3136247848 abstract "The capacitance rise in low frequency <italic>C</italic>–<italic>V</italic> curves originates due to diffusive storage of injected carriers within the bulk in the case of intrinsic devices, whereas a voltage dependent depletion width is the cause in the case of devices having traps." @default.
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- W3136247848 date "2021-01-01" @default.
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- W3136247848 title "Impact of defect states on the capacitance voltage characteristics of space charge limited organic diodes, and determination of defect states" @default.
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