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• W3136283354 abstract "Abstract Carrier mobility is one of the most fundamental material parameters of semiconductors and requisite for device applications and interpretation of physical phenomena. We determined the electron and hole mobilities of a CH 3 NH 3 PbBr 3 single crystal in the high-carrier density regime by combining AC Hall measurements under photoexcitation and two-carrier analysis. Both electron and hole mobilities were significantly enhanced by photo-doping and exceeded 300 cm 2 V −1 s −1 , which are comparable to the electron Hall mobilities of conventional inorganic semiconductors. Our experimental results indicate that charged dislocation scattering dominates the carrier transport at room temperature in the low-carrier density regime." @default.
• W3136283354 created "2021-03-29" @default.
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• W3136283354 date "2021-03-31" @default.
• W3136283354 modified "2023-10-10" @default.
• W3136283354 title "Observation of high carrier mobility in CH₃NH₃PbBr₃ single crystals by AC photo-Hall measurements" @default.
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• W3136283354 doi "https://doi.org/10.35848/1882-0786/abf02b" @default.
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