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- W3136302458 abstract "We investigate multiphonon-electron coupling enhanced defect generation process and breakdown (BD) in middle-of-line (MOL) spacer dielectrics (Si <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> N <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>4</sub> , SiBCN, and SiOCN). Rather than traditional Poole-Frenkel process, we report inelastic multiphonon assisted tunneling plays a key role in conduction process in these defective dielectrics in both initial and post-stress electron conduction. More importantly, we demonstrate defect generation process follows a universal process independent of thickness among these seemingly very different dielectrics. We show multiphonon-electron coupling is responsible for the enhanced defect generation rate due to high-energy electrons at the anode, thus triggering to specie-release induced BD." @default.
- W3136302458 created "2021-03-29" @default.
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- W3136302458 date "2020-12-12" @default.
- W3136302458 modified "2023-09-26" @default.
- W3136302458 title "Multiphonon-Electron Coupling Enhanced Defect Generation and Breakdown Mechanism in MOL New Spacer Dielectrics for 7nm/5nm Technology Nodes and Beyond" @default.
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- W3136302458 doi "https://doi.org/10.1109/iedm13553.2020.9372017" @default.
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