Matches in SemOpenAlex for { <https://semopenalex.org/work/W3136355776> ?p ?o ?g. }
Showing items 1 to 70 of
70
with 100 items per page.
- W3136355776 abstract "Advanced packaging technologies, incorporating through-silicon vias (TSVs) have the potential to improve functionality and electrical performance of semiconductor devices in a reduced package size. Such technologies are coming to prominence for devices requiring high bandwidth memory in emerging applications such as self-driving cars, machine learning and real-time speech processing [1]–[3]. In ‘via-middle’ process flows, the TSVs are exposed from the back side of the wafer by grind and plasma etch steps. Dielectric layers deposited using Plasma Enhanced Chemical Vapor Deposition (PECVD) serve to passivate and mechanically support the exposed TSV prior to bump/RDL formation and then chip-to-wafer or wafer-to-wafer bonding. Prior to via reveal processing, device wafers are bonded to silicon or glass carriers and thinned to around 50μm. The temporary bonding material imposes a temperature constraint of ~190°C during all subsequent via reveal process steps. This temperature constraint is especially challenging for the PECVD passivation processes where films with stable electrical and mechanical properties are required. Controlling PECVD film stress is also critical as stresses can cause excessive wafer bow in thinned wafers unless countermeasures are taken. While average stress must be controlled, it is also critical to minimize within-wafer stress as this will impact die-level bow and affect subsequent die-attach processes. In this paper, we report on silicon nitride (SiN) - silicon oxide (SiO) stacks deposited at 10 MV.cm-1. These films are also optimized in terms of step coverage and stress characteristics. Crucially, electrical properties and stack stress are shown to be stable with no moisture absorption or drift in film properties over time when exposed to atmosphere." @default.
- W3136355776 created "2021-03-29" @default.
- W3136355776 creator A5034575158 @default.
- W3136355776 creator A5035644041 @default.
- W3136355776 creator A5058219305 @default.
- W3136355776 creator A5063318882 @default.
- W3136355776 creator A5067666837 @default.
- W3136355776 date "2020-10-13" @default.
- W3136355776 modified "2023-09-24" @default.
- W3136355776 title "Optimization of Low Temperature PECVD Dielectric Stacks foR Via Reveal Passivation" @default.
- W3136355776 cites W2564353128 @default.
- W3136355776 cites W2622148586 @default.
- W3136355776 cites W2913898746 @default.
- W3136355776 cites W2970801829 @default.
- W3136355776 doi "https://doi.org/10.23919/iwlpc52010.2020.9375872" @default.
- W3136355776 hasPublicationYear "2020" @default.
- W3136355776 type Work @default.
- W3136355776 sameAs 3136355776 @default.
- W3136355776 citedByCount "0" @default.
- W3136355776 crossrefType "proceedings-article" @default.
- W3136355776 hasAuthorship W3136355776A5034575158 @default.
- W3136355776 hasAuthorship W3136355776A5035644041 @default.
- W3136355776 hasAuthorship W3136355776A5058219305 @default.
- W3136355776 hasAuthorship W3136355776A5063318882 @default.
- W3136355776 hasAuthorship W3136355776A5067666837 @default.
- W3136355776 hasConcept C127413603 @default.
- W3136355776 hasConcept C133386390 @default.
- W3136355776 hasConcept C159985019 @default.
- W3136355776 hasConcept C160671074 @default.
- W3136355776 hasConcept C192562407 @default.
- W3136355776 hasConcept C24326235 @default.
- W3136355776 hasConcept C2777431650 @default.
- W3136355776 hasConcept C2779133538 @default.
- W3136355776 hasConcept C2779227376 @default.
- W3136355776 hasConcept C2780288131 @default.
- W3136355776 hasConcept C33574316 @default.
- W3136355776 hasConcept C38347018 @default.
- W3136355776 hasConcept C49040817 @default.
- W3136355776 hasConcept C544956773 @default.
- W3136355776 hasConceptScore W3136355776C127413603 @default.
- W3136355776 hasConceptScore W3136355776C133386390 @default.
- W3136355776 hasConceptScore W3136355776C159985019 @default.
- W3136355776 hasConceptScore W3136355776C160671074 @default.
- W3136355776 hasConceptScore W3136355776C192562407 @default.
- W3136355776 hasConceptScore W3136355776C24326235 @default.
- W3136355776 hasConceptScore W3136355776C2777431650 @default.
- W3136355776 hasConceptScore W3136355776C2779133538 @default.
- W3136355776 hasConceptScore W3136355776C2779227376 @default.
- W3136355776 hasConceptScore W3136355776C2780288131 @default.
- W3136355776 hasConceptScore W3136355776C33574316 @default.
- W3136355776 hasConceptScore W3136355776C38347018 @default.
- W3136355776 hasConceptScore W3136355776C49040817 @default.
- W3136355776 hasConceptScore W3136355776C544956773 @default.
- W3136355776 hasLocation W31363557761 @default.
- W3136355776 hasOpenAccess W3136355776 @default.
- W3136355776 hasPrimaryLocation W31363557761 @default.
- W3136355776 hasRelatedWork W14131019 @default.
- W3136355776 hasRelatedWork W14842877 @default.
- W3136355776 hasRelatedWork W16261810 @default.
- W3136355776 hasRelatedWork W16312209 @default.
- W3136355776 hasRelatedWork W30118548 @default.
- W3136355776 hasRelatedWork W30759372 @default.
- W3136355776 hasRelatedWork W33096308 @default.
- W3136355776 hasRelatedWork W46094295 @default.
- W3136355776 hasRelatedWork W48102568 @default.
- W3136355776 hasRelatedWork W50999665 @default.
- W3136355776 isParatext "false" @default.
- W3136355776 isRetracted "false" @default.
- W3136355776 magId "3136355776" @default.
- W3136355776 workType "article" @default.