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- W3136456080 abstract "With the excellent material properties of Carbon Nano-tubes (CNTs) developed in this work (Coefficient of Thermal Expansion ~-2 x 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-6</sup> K <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> , Resistivity~10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-6</sup> Ω-m, Young's modulus~1000 GPa, and thermal conductivity ~800 Wm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> K <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-1</sup> ), the real 3D integrated circuits (ICs) system with CNTs as the high aspect ratio (>25)/small diameters (<; 5 μm) Through Silicon Vias (TSVs) is demonstrated. The device temperature can be reduced ~15 °C and the keep-out zone region can be reduced ~80%. On the other hand, the CNTs 3DICs system also shows that the better system-level electrical performance from the latency, bandwidth density, power density, and reliability (~10X) points of view. The developed technologies including (1) High quality CNTs growing at the low temperature (550 °C) using a novel gas Fe(C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> H <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sub> ) <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sub> reactant, (2) Optimized wafer bonding process, (3) Non-mask laser engrave patterning, and (4) wafer transfer technology by a thermal release tape/ethylene viny acetate processes provide the useful solution for the applications of CNTs as a vertical connection material in the near coming high-density 3D device." @default.
- W3136456080 created "2021-03-29" @default.
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- W3136456080 date "2020-12-12" @default.
- W3136456080 modified "2023-10-03" @default.
- W3136456080 title "The demonstration of Carbon Nano-Tubes (CNTs) as a promising high Aspect Ratio (>25) Through Silicon Vias (TSVs) material for the vertical connection in the high dense 3DICs" @default.
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- W3136456080 doi "https://doi.org/10.1109/iedm13553.2020.9371949" @default.
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