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- W3136456631 abstract "The distribution of radiation induced positive oxide trapped charges (N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ot</inf> ) in buried oxide (BOX) with different applied electric fields for high-voltage (HV) SOI LDMOS is investigated. In contrast to the traditional model which depends upon N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ot</inf> buildup near the interface that the field line points to, the verified experimental results in this work indicated that there are still a non-negligible set of N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ot</inf> generated in SOI/BOX interface even if the electric field plays a negative role (field line perpendicular to the SOI/BOX interface pointing from the top to the bottom of the BOX). The improved model on BOX damage induced by TID considering this set of N <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>ot</inf> and its saturation effect is proposed and adopted in accurate simulated analysis to predict the post-irradiation device behavior. The mechanism of HV SOI LDMOS degradation during irradiation is also revealed. The radiation hardening LDMOS in this work keeps breakdown voltage above 120 V at D=500 krad(Si)." @default.
- W3136456631 created "2021-03-29" @default.
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- W3136456631 date "2020-12-12" @default.
- W3136456631 modified "2023-09-27" @default.
- W3136456631 title "An Improved Model on Buried-Oxide Damage for Total-Ionizing-Dose Effect on HV SOI LDMOS" @default.
- W3136456631 cites W2893887613 @default.
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- W3136456631 doi "https://doi.org/10.1109/iedm13553.2020.9372012" @default.
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