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- W3137407584 abstract "The negative photoconductivity (NPC) effect originating from the surface shell layer has been considered as an efficient approach to improve the performance of optoelectronic nanodevices. However, a scientific design and precise growth of NPC-effect-caused shell during nanowire (NW) growth process for achieving high-performance photodetectors are still lacking. In this work, GeS NWs with a controlled sulfur-rich shell, diameter, and length are successfully prepared by a simple chemical vapor deposition method. As checked by transmission electron microscopy, the thickness of the sulfur-rich shell ranges from 10.5 ± 1.5 to 13.4 ± 2.5 nm by controlling the NW growth time. The composition of the sulfur-rich shell is studied by X-ray photoelectron spectroscopy, showing the decrease of S in the GeSx shell from the surface to core. When configured into the well-known phototransistor, a featured NPC effect is observed, benefiting the high-performance photodetector with high responsivity of 105 A·W–1 and detectivity of 1012 Jones for λ = 405 nm with ultralow intensity of 0.04 mW·cm–2. However, the thicker-shell NW phototransistor shows an unstable photodetector behavior with smaller negative photocurrent because of more hole-trapping states in the thicker shell. All results suggest a careful design and controlled growth of an NPC-effect-caused shell for future optoelectronic applications." @default.
- W3137407584 created "2021-03-29" @default.
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- W3137407584 date "2021-03-19" @default.
- W3137407584 modified "2023-10-10" @default.
- W3137407584 title "In Situ Growth of GeS Nanowires with Sulfur-Rich Shell for Featured Negative Photoconductivity" @default.
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- W3137407584 doi "https://doi.org/10.1021/acs.jpclett.1c00540" @default.
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