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- W3137854645 abstract "CMOS-MEMS pyroelectric detectors based on 12%-doped ScAlN are fabricated using 8-inch MEMS wafer technology and characterized. The ScAlN pyroelectric material is deposited at a low temperature of ~200 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>o</sup> C. The results show D* as high as 4.3 x 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>7</sup> (cm√Hz)/W and NEP as low as 1.26 x 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>-9</sup> W/√Hz. This is the first demonstration of a functional CMOS-MEMS pyroelectric detector using ScAlN as the pyroelectric sensing material. Compared to AlN that usually presents D* in the range of 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>5</sup> -10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>6</sup> , Sc-doped AlN brings on the promise of better performing CMOS-MEMS pyroelectric detectors that could be miniaturized, integrated with CMOS circuits and provide wider applications." @default.
- W3137854645 created "2021-03-29" @default.
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- W3137854645 date "2021-01-25" @default.
- W3137854645 modified "2023-09-24" @default.
- W3137854645 title "Improved Specific Detectivity to 10<sup>7</sup> for CMOS-MEMS Pyroelectric Detector Based on 12%-Doped Scandium Aluminum Nitride" @default.
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- W3137854645 doi "https://doi.org/10.1109/mems51782.2021.9375145" @default.
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