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- W3138211032 abstract "In this paper, a three-dimensional (3-D) deep-trench capacitor using anti-ferroelectric (AFE) Hf <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>x</inf> Zr <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>1-x</inf> O <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</inf> (HZO) is experimentally demonstrated as a promising option for embedded dynamic random-access memory (eDRAM) by showing (i) a successful 10ns polarization switching for read/write operations, (ii) maximum operating voltage less than 1.8V, (iii) retention much longer than 1ms, and (iv) endurance reaching 10 <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>12</sup> cycles at elevated temperature. Polarization-voltage (P-V) characteristics and endurance behavior in AFE HZO capacitors are explored through both modeling and P-V evolution during field cycling under extensive pulsing schemes. It is shown that (i) defect diffusion driven by depolarization and (ii) partial domain switching play important roles in endurance fatigue. Finally, a vertical stack with multiple HZO capacitors in parallel is demonstrated, showing a 1T- multi-C memory architecture as a viable path toward future ultra-high density eDRAM technology." @default.
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- W3138211032 date "2020-12-12" @default.
- W3138211032 modified "2023-10-05" @default.
- W3138211032 title "Anti-ferroelectric Hf<sub>x</sub>Zr<sub>1-x</sub>O<sub>2</sub> Capacitors for High-density 3-D Embedded-DRAM" @default.
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- W3138211032 doi "https://doi.org/10.1109/iedm13553.2020.9372011" @default.
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