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- W3138397242 abstract "Indium-doped cadmium oxide (In:CdO) thin films exhibit tunable epsilon-near-zero (ENZ) modal frequencies across a wide spectral range, bridging the mid-wave and near-infrared (IR). In:CdO thin films are prepared by reactive cosputtering from metallic Cd and In targets using high-power impulse magnetron sputtering (HiPIMS) and radio frequency sputtering, respectively. Using this approach, CdO thin films with carrier concentrations ranging from $2.3ifmmodetimeselsetexttimesfi{}{10}^{19}$ to $4.0ifmmodetimeselsetexttimesfi{}{10}^{20}phantom{rule{0.16em}{0ex}}mathrm{c}{mathrm{m}}^{text{--}3}$ and mobilities ranging from 300 to $400phantom{rule{0.16em}{0ex}}mathrm{c}{mathrm{m}}^{2}/mathrm{V}phantom{rule{0.16em}{0ex}}mathrm{s}$ are readily achieved. UV-VIS absorption spectra are used to measure optical bandgap, revealing a Burstein-Moss shift of 0.58 eV across the doping range investigated. Optical measurements demonstrate the tunability of near-perfect plasmonic ENZ absorption across the mid-wave and into the near-IR spectral ranges by controlling the carrier concentration through doping, while tuning the film thickness for impedance matching. In comparison to other dopants that can be introduced to HiPIMS-deposited CdO, In offers the largest range of carrier concentrations while maintaining high mobility, thus allowing for the widest accessibility of the IR spectrum of a single plasmonic material grown by sputtering." @default.
- W3138397242 created "2021-03-29" @default.
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- W3138397242 date "2021-03-24" @default.
- W3138397242 modified "2023-10-10" @default.
- W3138397242 title "Mid-wave to near-IR optoelectronic properties and epsilon-near-zero behavior in indium-doped cadmium oxide" @default.
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- W3138397242 doi "https://doi.org/10.1103/physrevmaterials.5.035202" @default.
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