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• W3138453003 abstract "Gallium nitride (GaN) single crystals with high carrier concentration up to 1020cm−3 order were evaluated by the terahertz time-domain spectroscopic ellipsometry. The electric properties such as carrier density are obtained by the fitting analysis based on Drude model. The terahertz ellipsometry is powerful non-contact and non-destructive evaluation method for semiconductors with high carrier concentration." @default.
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• W3138453003 date "2020-11-08" @default.
• W3138453003 modified "2023-09-23" @default.
• W3138453003 title "Evaluation for GaN single crystals with high doping concentration by the terahertz ellipsometry" @default.
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• W3138453003 doi "https://doi.org/10.1109/irmmw-thz46771.2020.9370523" @default.
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