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- W3138863394 abstract "Significant increases in thermal generation rates in molecular-beam epitaxy (MBE)-grown p-i-n-i-p GaAs structures are attributed to depassivation of hydrogen-defect/impurity complexes during high-intensity, low-energy electron-beam irradiation. Quantum calculations of relevant defect energy levels and reaction pathways suggest that depassivation of oxygen impurities is the likely cause of the observed degradation. Electric-field and excess-carrier-induced dehydrogenation of O <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>As</sub> -H complexes is identified as a likely rate-limiting process, leading to the observed enhanced thermal carrier generation in these structures." @default.
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- W3138863394 date "2021-08-01" @default.
- W3138863394 modified "2023-09-26" @default.
- W3138863394 title "Defect and Impurity-Complex Depassivation During Electron-Beam Irradiation of GaAs" @default.
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- W3138863394 doi "https://doi.org/10.1109/tns.2021.3067769" @default.
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