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• W3139091937 abstract "The fascinating electronic properties of graphene gave the possibility to investigate quantum electrodynamics phenomena in a solid-state playground, setting it therefore as anextremely interesting material which was theoretically studied for sixdecades prior to its experimental isolation.The epitaxial graphene (EG) on silicon carbide (SiC) was the first realization ofthis one-atom thick material and it still appears to be the solution of highestpotentiality for a concrete application of graphene in commercial electronics. Asa purely two-dimensional material, the influence of the substrate in the determinationof the graphene electronic properties is of crucial importance. The firstEG layer on SiC(0001) (buffer layer) strongly interacts with the substrate, suppressingthe development of the graphene π-bands. The possibility to intercalateforeign atomic species at the interface to relieve the buffer layer from the interactionwith the substrate has been a breakthrough in the graphene research. Inparticular, it has been observed that different intercalants modify the grapheneelectronic properties in different ways. In addition to this, the graphene electronicproperties are also affected by adsorbants and by the ordering of those as well asof the intercalated elements. The electronic properties of graphene, like carrierconcentration, extrinsic spin-orbit coupling or band gap opening can be thereforeselectively modified (or induced) by choosing the correct element or compound todeposit onto or intercalate under the EG on SiC.The present thesis follows the mainstream of that research branch presentingexperimental data on the electronic properties of large-area epitaxial grapheneon SiC(0001), modified by the intercalation of foreign atomic species at the heterointerfacebetween the graphene and the substrate. Prior to the investigationof the sample properties, details about the description of the growth methodologiesand parameters will be provided. Several surface analysis techniques havebeen used to characterize the properties of the material, like angle-resolved photoelectronspectroscopy (ARPES), low-energy electron microscopy (LEEM) anddiffraction (LEED), atomic force microscopy (AFM) and core-level photoelectronspectroscopy (CLPES). A background about the general main graphene electronicproperties as well as the working principles of the listed experimental techniqueswill be provided, together with a brief overview of the SiC properties. The core ofthe thesis will be focused in first place on the possibility to relieve the buffer layergraphene from the interaction with the substrate, rendering in this way the graphenedecoupled. In particular, the quasiparticle dynamics in quasi-free standingmonolayer graphene will be discussed and an estimation of the electron-phononcoupling constant will be provided. The growth of high-quality epitaxial bilayergraphene (BLG) will be described and discussed and high-resolution ARPES dataof large-area quasi-free standing trilayer graphene (QFTLG), obtained for the firsttime on SiC by the H-intercalation of BLG, will be shown. A relevant weight willbe given to the intercalation of foreign atomic species, deposited from solid-statesources. In those cases, element- and concentration-dependent electronic propertiesare induced on the graphene by the intercalants. In particular, it willbe shown that an intercalated ML of Cu atoms orders itself with a (13 x 13)periodicity with respect to the graphene and that such a graphene superlatticeexhibits strong renormalization effects of its low-energy excitations dispersion. Inparticular, novel Dirac-like states centered in the non-equivalent corners of thesuperlattice mini Brillouin zone are observed. The intercalation of Sb atoms underthe EG is achieved by means of a novel, modified deposition/intercalationprocess. The Sb-intercalated graphene is n-type doped and exhibits an unusualthermal and chemical stability, together with peculiar morphological propertiesrelated to the spatial distribution and the chemical state of the Sb at the interface.Eventually, one-dimensional anisotropic etching stimulated by catalytic nanoparticlesand self-assembly of 4H-SiC(0001) vicinal surfaces will be introduced as theroutes pursued to carve nanoribbons starting from EG on SiC(0001)." @default.
• W3139091937 created "2021-03-29" @default.
• W3139091937 creator A5003079063 @default.
• W3139091937 date "2014-01-01" @default.
• W3139091937 modified "2023-09-23" @default.
• W3139091937 title "Large-area epitaxial graphene on SiC(0001): from decoupling to interface engineering" @default.
• W3139091937 hasPublicationYear "2014" @default.
• W3139091937 type Work @default.
• W3139091937 sameAs 3139091937 @default.
• W3139091937 citedByCount "0" @default.
• W3139091937 crossrefType "journal-article" @default.
• W3139091937 hasAuthorship W3139091937A5003079063 @default.
• W3139091937 hasConcept C110738630 @default.
• W3139091937 hasConcept C111368507 @default.
• W3139091937 hasConcept C121332964 @default.
• W3139091937 hasConcept C127313418 @default.
• W3139091937 hasConcept C140807948 @default.
• W3139091937 hasConcept C143401881 @default.
• W3139091937 hasConcept C171250308 @default.
• W3139091937 hasConcept C181966813 @default.
• W3139091937 hasConcept C192562407 @default.
• W3139091937 hasConcept C205286655 @default.
• W3139091937 hasConcept C26873012 @default.
• W3139091937 hasConcept C2777289219 @default.
• W3139091937 hasConcept C2779227376 @default.
• W3139091937 hasConcept C30080830 @default.
• W3139091937 hasConcept C49040817 @default.
• W3139091937 hasConcept C86025842 @default.
• W3139091937 hasConceptScore W3139091937C110738630 @default.
• W3139091937 hasConceptScore W3139091937C111368507 @default.
• W3139091937 hasConceptScore W3139091937C121332964 @default.
• W3139091937 hasConceptScore W3139091937C127313418 @default.
• W3139091937 hasConceptScore W3139091937C140807948 @default.
• W3139091937 hasConceptScore W3139091937C143401881 @default.
• W3139091937 hasConceptScore W3139091937C171250308 @default.
• W3139091937 hasConceptScore W3139091937C181966813 @default.
• W3139091937 hasConceptScore W3139091937C192562407 @default.
• W3139091937 hasConceptScore W3139091937C205286655 @default.
• W3139091937 hasConceptScore W3139091937C26873012 @default.
• W3139091937 hasConceptScore W3139091937C2777289219 @default.
• W3139091937 hasConceptScore W3139091937C2779227376 @default.
• W3139091937 hasConceptScore W3139091937C30080830 @default.
• W3139091937 hasConceptScore W3139091937C49040817 @default.
• W3139091937 hasConceptScore W3139091937C86025842 @default.
• W3139091937 hasLocation W31390919371 @default.
• W3139091937 hasOpenAccess W3139091937 @default.
• W3139091937 hasPrimaryLocation W31390919371 @default.
• W3139091937 hasRelatedWork W1783515411 @default.
• W3139091937 hasRelatedWork W1960603846 @default.
• W3139091937 hasRelatedWork W1971507091 @default.
• W3139091937 hasRelatedWork W1989464265 @default.
• W3139091937 hasRelatedWork W2004102116 @default.
• W3139091937 hasRelatedWork W2047548961 @default.
• W3139091937 hasRelatedWork W20888888 @default.
• W3139091937 hasRelatedWork W2170373660 @default.
• W3139091937 hasRelatedWork W2267970909 @default.
• W3139091937 hasRelatedWork W2333366813 @default.
• W3139091937 hasRelatedWork W2530298455 @default.
• W3139091937 hasRelatedWork W2567499421 @default.
• W3139091937 hasRelatedWork W2773519591 @default.
• W3139091937 hasRelatedWork W2980810664 @default.
• W3139091937 hasRelatedWork W2995749487 @default.
• W3139091937 hasRelatedWork W3026035836 @default.
• W3139091937 hasRelatedWork W3100301553 @default.
• W3139091937 hasRelatedWork W3127275506 @default.
• W3139091937 hasRelatedWork W3135132294 @default.
• W3139091937 hasRelatedWork W3207455428 @default.
• W3139091937 isParatext "false" @default.
• W3139091937 isRetracted "false" @default.
• W3139091937 magId "3139091937" @default.
• W3139091937 workType "article" @default.