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- W3139253904 abstract "a novel p-GaN gate topology is proposed to inherently increase threshold voltage (V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</inf> ) and enhance V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</inf> stability. The gate consists of a conventional Schottky-type p-GaN gate and a normally-on p-channel FET bridge connecting source and gate. By modulating the V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</inf> of the p-channel FET, a wide-range positive V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</inf> from 3.6 V to 8.2 V can be achieved without subthreshold voltage degradation. Owing to the well-grounded p-GaN through the normally-on p-FET channel, a stable V <inf xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>TH</inf> is also achieved without sacrificing the low gate leakage and large gate swing enabled by the Schottky gate metal/p-GaN contact." @default.
- W3139253904 created "2021-03-29" @default.
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- W3139253904 date "2020-12-12" @default.
- W3139253904 modified "2023-10-03" @default.
- W3139253904 title "E-mode p-GaN Gate HEMT with p-FET Bridge for Higher V<sub>TH</sub> and Enhanced V<sub>TH</sub> Stability" @default.
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- W3139253904 doi "https://doi.org/10.1109/iedm13553.2020.9371969" @default.
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