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- W3139978183 abstract "본 연구에서는 화학 증착법을 이용하여 텅스텐 산화물을 제조한 후 기판 온도에 따른 성막 특성을 분석하고, 성막 된 텅스텐 산화물을 전기 변색 소자 제조에 응용하여 소자 특성을 살펴보았다. 증착 온도 <TEX>$300^{circ}C$</TEX> 이상에서 최대 성막속도(<TEX>$8{mu}m/min$</TEX>)를 얻을 수 있었으며, <TEX>$275^{circ}C$</TEX> 이하에서는 표면 반응 율속 특성을 보였고 이때 겉보기 활성화 에너지 값은 45.9 kJ/mol이였다. 성막 된 텅스텐 산화물은 <TEX>$275^{circ}C$</TEX> 이하에서는 비정질막이, 그 이상 온도에서는 결정질 막이 형성되었다. 전기 변색 소자 적용시 유리한 비정질막이 성막되는 조건에서 증착 온도 및 두께 변화에 따른 전기 변색 특성을 평가하였다. 증착 온도가 동일한 경우 두께가 두꺼울수록 그리고 두께가 일정한 경우는 증착 온도가 낮을수록 변색 효율 측면에서 유리한 결과를 얻었다. A study on chemical vapor deposition(CVD) of <TEX>$WO_3$</TEX> and the electrochromic properties of the CVD <TEX>$WO_3$</TEX> films have been carried out. The crystalinity, purity, and growth rate of the films depending on substrate temperatures are investigated. The highest growth rate is <TEX>$8{mu}m/min$</TEX> at the substrate temperatures above <TEX>$300^{circ}C$</TEX> and the estimated activation energy for overall film growth is about 45.9 kJ/mol at the temperatures of <TEX>$225{sim}275^{circ}C$</TEX>, where the CVD process is controlled by a surface reaction kinetics. The films grown below <TEX>$275^{circ}C$</TEX> are amorphous, while those deposited above <TEX>$300^{circ}C$</TEX> are crystalline. The effects of thickness and deposition temperature of the <TEX>$WO_3$</TEX> films on electrochromic activity are also investigated. The coloration efficiency of the films increases with increase in film thickness and decrease in deposition temperature." @default.
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- W3139978183 date "2011-08-01" @default.
- W3139978183 modified "2023-10-18" @default.
- W3139978183 title "Preparation of WO3Films by CVD and their Application in Electrochromic Devices" @default.
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- W3139978183 doi "https://doi.org/10.9713/kcer.2011.49.4.405" @default.
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