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- W3141332059 abstract "InAS/P-InAsSb 雪崩光电二极管结构的理论描述。象有做集中和偏爱电压的变化的获得，过量噪音因素和他们的交易那样的参数为考虑雪崩增加过程的历史依赖者理论的 APD 被估计了。LWIR APD 被期望在光煤气的传感器中并且在光通讯系统的未来产生发现申请。" @default.
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- W3141332059 date "2008-01-01" @default.
- W3141332059 modified "2023-09-28" @default.
- W3141332059 title "InAs/InAsSb Avalanche Photodiode （APD） for applicaions in long-wavelength infrared region" @default.
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