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• W3142254395 abstract "This article presents a fast-transient radiation-hardened low-dropout (LDO) voltage regulator integrated in a standard 0.6-μm BiCMOS technology for space and other harsh radiation environment applications. The fabricated LDO consumes 150- μA quiescent current at 6-A maximum output current. An LDO voltage of 300 mV which corresponds to an ultralow R <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>DS(ON)</sub> resistance of 500 mΩ is realized by accurate modeling. A separate fast-transient response circuit under narrow-bandwidth condition is proposed to improve the output voltage transient speed. It operates from an input voltage range of 2.8-5.5 V and provides an output voltage of 2.5 V, with output voltage accuracy of ±2%. The proposed LDO achieves a successful line regulation of 1 mV/V, and a load regulation of 2.16 mV/A. Effective radiation-hardened layout techniques are applied to realize high area-efficient LDO chip, whose total area including pads is 5.35 mm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> , which represents only about one-third area of similar radiation-hardened products. Furthermore, a special set of total ionizing dose (TID) experiments and single-event latch-up (SEL) experiments were performed. The measurement results show that the LDO can tolerate up to a TID of 150 krad (Si) and SEL immunity at a linear energy transfer (LET) of 99.8 MeV/(mg/cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> ) with proposed layout design." @default.
• W3142254395 created "2021-04-13" @default.
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• W3142254395 date "2021-05-01" @default.
• W3142254395 modified "2023-10-16" @default.
• W3142254395 title "Fast-Transient Radiation-Hardened Low-Dropout Voltage Regulator for Space Applications" @default.
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• W3142254395 doi "https://doi.org/10.1109/tns.2021.3070697" @default.
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