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- W3143606424 abstract "The effects of self-heating in electrical devices on measurement capacitance have not been considered seriously. In a previous study, we showed that self-heating is a source of negative capacitance (NC), observed widely in devices in low frequency ranges. The NC is caused by the nonlinear coupling of the real and imaginary parts of admittance through temperature modulation, owing to self-heating in devices. Because capacitance reduction leading to NC in low frequency ranges can start even at high frequencies (∼100 kHz), the capacitance will likely be underestimated when self-heating is not considered. Thus, here, the self-heating model is extended to explain the capacitance reduction in high frequency ranges; the key to enhancing the reduction is adiabatically heated layers with an extremely small volume. Moreover, a concise method of correcting the reduction is developed. The combination of the self-heating model and the equivalent circuit of a tested device provides a method to eliminate the nonlinear effects and obtain the intrinsic capacitance of the device. The applicability of the model and correction method is examined by fitting impedance spectra for double-layered organic light emitting diodes. The corrected capacitance obtained by the fit clarifies the charge accumulation in each layer under high bias. The model and method are general and applicable to various electronic devices. Our findings prompt the reconsideration of conventional capacitance vs voltage or frequency analyses for electronic devices with ubiquitous self-heating." @default.
- W3143606424 created "2021-04-13" @default.
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- W3143606424 date "2021-03-29" @default.
- W3143606424 modified "2023-10-06" @default.
- W3143606424 title "Apparent capacitance reduction at high frequencies by self-heating in organic thin-film devices and correction methods" @default.
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- W3143606424 doi "https://doi.org/10.1063/5.0048601" @default.
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