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- W3146034598 abstract "Zinc oxide (ZnO) nanorods have shown very unique properties for application such as field emission (FE), light emitting diode (LED), transparent film of solar cell. In general, as-synthesized ZnO nanorods have n-type semiconducting properties. Many researchers have tired to grow p-type ZnO nanorods for making p-n junction device. The construction of p-n junction device using ZnO nanoroads is limited by producing p[type ZnO nanorods. In this work, chemical bath deposition (CBD) is used to synthesize ZnO nanorods. Before CBD a seed layer is produced by atomic layer deposition (ALD) on n-type porous silicon (PS). To fabricate p-type ZnO nanorods, nitrogen (N) from NH <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>3</sub> is used as doping material during seeding process. The ZnO nanorods are aligned vertically with uniform shape and length on the PS substrate. This approach opens the possibility of creating standard p-n junction device for applications as sensor arrays, piezoelectric antenna arrays, optoelectronic devices, and interconnects." @default.
- W3146034598 created "2021-04-13" @default.
- W3146034598 creator A5037894141 @default.
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- W3146034598 date "2011-08-01" @default.
- W3146034598 modified "2023-10-05" @default.
- W3146034598 title "Aqueous synthesis of n-/p-type ZnO nanorods on porous silicon for the application of p-n junction device" @default.
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- W3146034598 doi "https://doi.org/10.1109/nano.2011.6144561" @default.
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