FRINK Linked Data Fragments server

Matches in SemOpenAlex for { <https://semopenalex.org/work/W3146056255> ?p ?o ?g. }

• W3146056255 abstract "The output characteristics of insulated gate transistors (IGT's) are shown to be determined by the variation in the gain of the wide-base transistor in the device structure. Improvements in differential output resistance can be achieved by either decreasing the lifetime, as demonstrated in this paper by using electron irradiation, or by using a punchthrough base design, HE insulated gate transistor (IGT) belongs in the class of power semiconductor devices which exhibit current saturation with increasing output voltage. Other power devices which belong in this category are power MOSFET's and bipolar transistors. It is customary to characterize these devices in terms of their output resistance. A high output resistance is desirable when using these devices in circuits for performing either current limiting or when switching an inductive load. In the case of a power bipolar transistor, the output characteristics are determined by the design of the base region. These devices are usually fabricated with a narrow-base region in order to maintain a high current gain. An extended drift region is used to support the high collector voltage. Despite this design, the depletion layer of the base-collector junction does extend on the more-heavily doped (diffused) side leading to a reduction of the output resistance (l). In contrast, the drain output resistance of the power MOSFET is determined by the channel region. In this case, a reduction of the effective channel length has been shown to reduce the output resistance 121 Although many papers have been published dealing with the analysis of the on-state and switching behavior of IGT's (3)- (6), an analysis of the output characteristics has not been reported. Such an analysis is useful for identifying the device parameters that determine the shape of the output characteris- tics. This is important because the observed output resistance of IGT's can be very low as illustrated in Fig. 1, which shows a photograph of the typical output characteristics of three 600- V IGT's. The three traces were obtained by taking three identical IGT chips and irradiating them to doses of 1, 4, and 16 Mrad using 3-MeV electrons. Note the low output resistance for the 1-Mrad device. The output resistance increases with increasing radiation dose." @default.
• W3146056255 created "2021-04-13" @default.
• W3146056255 creator A5016181675 @default.
• W3146056255 date "1986-01-01" @default.
• W3146056255 modified "2023-09-24" @default.
• W3146056255 title "Analysis of the Output Conductance of Insulated Gate Transistors" @default.
• W3146056255 cites W1564201208 @default.
• W3146056255 cites W1986441932 @default.
• W3146056255 cites W2135924034 @default.
• W3146056255 cites W2145320048 @default.
• W3146056255 cites W2154428632 @default.
• W3146056255 hasPublicationYear "1986" @default.
• W3146056255 type Work @default.
• W3146056255 sameAs 3146056255 @default.
• W3146056255 citedByCount "1" @default.
• W3146056255 crossrefType "journal-article" @default.
• W3146056255 hasAuthorship W3146056255A5016181675 @default.
• W3146056255 hasConcept C119599485 @default.
• W3146056255 hasConcept C127413603 @default.
• W3146056255 hasConcept C129014197 @default.
• W3146056255 hasConcept C158470141 @default.
• W3146056255 hasConcept C165801399 @default.
• W3146056255 hasConcept C172385210 @default.
• W3146056255 hasConcept C192562407 @default.
• W3146056255 hasConcept C195370968 @default.
• W3146056255 hasConcept C23061349 @default.
• W3146056255 hasConcept C2778413303 @default.
• W3146056255 hasConcept C49040817 @default.
• W3146056255 hasConcept C88653102 @default.
• W3146056255 hasConceptScore W3146056255C119599485 @default.
• W3146056255 hasConceptScore W3146056255C127413603 @default.
• W3146056255 hasConceptScore W3146056255C129014197 @default.
• W3146056255 hasConceptScore W3146056255C158470141 @default.
• W3146056255 hasConceptScore W3146056255C165801399 @default.
• W3146056255 hasConceptScore W3146056255C172385210 @default.
• W3146056255 hasConceptScore W3146056255C192562407 @default.
• W3146056255 hasConceptScore W3146056255C195370968 @default.
• W3146056255 hasConceptScore W3146056255C23061349 @default.
• W3146056255 hasConceptScore W3146056255C2778413303 @default.
• W3146056255 hasConceptScore W3146056255C49040817 @default.
• W3146056255 hasConceptScore W3146056255C88653102 @default.
• W3146056255 hasLocation W31460562551 @default.
• W3146056255 hasOpenAccess W3146056255 @default.
• W3146056255 hasPrimaryLocation W31460562551 @default.
• W3146056255 hasRelatedWork W1423669867 @default.
• W3146056255 hasRelatedWork W1975365961 @default.
• W3146056255 hasRelatedWork W2015470559 @default.
• W3146056255 hasRelatedWork W2023422915 @default.
• W3146056255 hasRelatedWork W2132449362 @default.
• W3146056255 hasRelatedWork W2144450134 @default.
• W3146056255 hasRelatedWork W2163145465 @default.
• W3146056255 hasRelatedWork W24695817 @default.
• W3146056255 hasRelatedWork W260589627 @default.
• W3146056255 hasRelatedWork W2993142332 @default.
• W3146056255 hasRelatedWork W3187991975 @default.
• W3146056255 hasRelatedWork W796519926 @default.
• W3146056255 hasRelatedWork W1599640585 @default.
• W3146056255 hasRelatedWork W2183157604 @default.
• W3146056255 hasRelatedWork W2273474307 @default.
• W3146056255 hasRelatedWork W2413489010 @default.
• W3146056255 hasRelatedWork W2812511636 @default.
• W3146056255 hasRelatedWork W2828366234 @default.
• W3146056255 hasRelatedWork W2846754884 @default.
• W3146056255 hasRelatedWork W3145499052 @default.
• W3146056255 isParatext "false" @default.
• W3146056255 isRetracted "false" @default.
• W3146056255 magId "3146056255" @default.
• W3146056255 workType "article" @default.