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- W3146077684 abstract "A Quasi-SO1 MOSFET structure has been fabricated in which the drain-side channel is placed over oxide while the source-side channel is left connected to the substrate. This device has many of the advantages of SO1 MOSFET without some of its problems. In particular, the drain breakdown voltage is found to improve over both the bulk and the complete-SO1 counterparts. It is confirmed that the maximum lateral electric field is lower in the SO1 channel than in a same-size bulk device. The selective epitaxy and polislhing technology combination used here makes it possible to fabricate all device types ranging from bulk to quasi-SO1 to complete SO1 on the same substrate, thus facilitating meaningful comparative studies." @default.
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- W3146077684 date "1992-01-01" @default.
- W3146077684 modified "2023-09-25" @default.
- W3146077684 title "Quasi-SO1 MOSFETs Using Selective Epitaxy and Polishing" @default.
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