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• W3146088309 abstract "A two-terminal 4H-SiC n-p-n bipolar phototransistor detector (PTD) with high gain is demonstrated. It was fabricated using the 4H-SiC epitaxial wafer grown by high-temperature chemical vapor deposition. The PTD shows a large photocurrent and responsivity enhancement over the conventional 4H-SiC p-i-n photodetector (PD). These enhancement effects are owing to the internal gain of the bipolar transistor. The detector shows a high optical gain of ~ 1450 at 360 nm and has a linear response to the ultraviolet (UV) light in the wide light intensity range of 0.7- 700 μ W <b xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>/</b> cm <sup xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>2</sup> at a low operating voltage of 3 V. The PTD can respond to the UV light from 220 to 340 nm and the peak responsivity is ~ 125 A/W at 275 nm. This work is significant for developing high-performance SiC-based bipolar phototransistors." @default.
• W3146088309 created "2021-04-13" @default.
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• W3146088309 date "2021-05-01" @default.
• W3146088309 modified "2023-09-26" @default.
• W3146088309 title "Low-Voltage and High-Gain Ultraviolet Detector Based on 4H-SiC n-p-n Bipolar Phototransistor" @default.
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• W3146088309 doi "https://doi.org/10.1109/ted.2021.3068243" @default.
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