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- W3147916212 abstract "In this work,we investigate the back-gate I-V characteristics for two kinds of NMOSFET/SIMOX transistors with H gate structure fabricated on two different SOI wafers.A transistors are made on the wafer implanted with Si+ and then annealed in N_2,and B transistors are made on the wafer without implantation and annealing.It is demonstrated experimentally that A transistors have much less back-gate threshold voltage shift△V_(th) than B transistors under X-ray total dose irradiation.Subthreshold charge separation technique is employed to estimate the build-up of oxide charge and interface traps during irradiation,showing that the reduced△V_(th) for A transistors is mainly due to its less build-up of oxide charge than B transistors.Photo- luminescence (PL) research indicates that Si implantation results in the formation of silicon nanocrystalline (nanocluster) whose size increases with the implant dose.This structure can trap electrons to compensate the positive charge build-up in the buried oxide during irradiation,and thus reduce the threshold voltage negative shift." @default.
- W3147916212 created "2021-04-13" @default.
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- W3147916212 date "2008-01-01" @default.
- W3147916212 modified "2023-09-25" @default.
- W3147916212 title "Research on total-dose hardening for H-gate P D NMOSFET/SIMOX by ion implanting into buried oxide" @default.
- W3147916212 hasPublicationYear "2008" @default.
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