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- W3147979002 abstract "This paper presents a 220GHz LNA in SiGe BiCMOS technology. Four stage Cascode topology is chosen for this circuit. The amplifier takes advantage of microstrip transmission line to realize the inductive passive device. The circuit was implemented in 0.13 μm SiGe BiCMOS process with f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>T</sub> /f <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> of 240/280GHz. The simulation results show that the LNA has a gain of 10.9dB at 220GHz and a 3-dB bandwidth of about 17GHz. The LNA draws about 14.66mA from a 2.4V supply." @default.
- W3147979002 created "2021-04-13" @default.
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- W3147979002 date "2020-09-20" @default.
- W3147979002 modified "2023-10-08" @default.
- W3147979002 title "A 220GHz LNA in SiGe BiCMOS process" @default.
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- W3147979002 doi "https://doi.org/10.1109/icmmt49418.2020.9386920" @default.
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