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- W3148577587 abstract "In this article, we report a new capacitance-voltage technique C( V) to investigate the interface proprieties of MOS devices. This technique is based on surface potential modulation using time varying (ac) magnetic field. It is experimentally validated on vertical double diffusion MOSFET (VDMOSFET). Data show that the surface potential is modulated using external ac magnetic field. In fact, applying an ac magnetic field with dc voltage sweeping of VDMOSFET gate ( V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ), we have been able, for the first time, to modulate the surface potential and measure the gate-source ( C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</sub> ) and gate-drain ( C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GD</sub> ) capacitances as a function of gate voltage ( V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) for P- and N-type transistors. Therefore, it offers a powerful tool to characterize different regions of the transistor and extract their technological and electrical parameters." @default.
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- W3148577587 date "2021-05-01" @default.
- W3148577587 modified "2023-10-06" @default.
- W3148577587 title "Capacitance–Voltage Technique Based on Time Varying Magnetic Field for VDMOSFET—Part I: Concept and Implementation" @default.
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- W3148577587 doi "https://doi.org/10.1109/ted.2021.3067587" @default.
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