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- W3149810922 abstract "We have studied the influence of hot-carrier degradation effects on the drain current of a gate-stack double-gate(GS DG) MOSFET device.Our analysis is carried out by using an accurate continuous current-voltage (Ⅰ-Ⅴ) model,derived based on both Poisson’s and continuity equations without the need of charge-sheet approximation. The developed model offers the possibility to describe the entire range of different regions(subthreshold, linear and saturation) through a unique continuous expression.Therefore,the proposed approach can bring considerable enhancement at the level of multi-gate compact modeling including hot-carrier degradation effects." @default.
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- W3149810922 date "2012-01-01" @default.
- W3149810922 modified "2023-09-23" @default.
- W3149810922 title "Continuous analytic IVV model for GS DG MOSFETs including hot-carrier degradation effects" @default.
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