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- W3149886857 abstract "a2O5 used in double-layer gate insulator a-Si TFT is formed by anodizing Ta. its process is compatible with fabricating process of TFT and its performance is excellent. We use citric acid solution as electrolyte and constant-current source as the power. The anodizing speed V is increased linearly with the current density jo, jo=0. 18 mA / cm is recommended. V can also be increased with the concentration of citric acid solution Po when Po is small. As Po is greater than 0.20%, V tends to saturation. Po=0.25-0.4% is recommended in order to control anodizing speed effectively.Anodizing voltage V plays an important role in controlling the thickness of Ta2O5. In anodizing stage, the current is constant, anodizing voltage improves linearly with time increasing until the current starts to decrease. Then the voltage tend to stability, anodization is coming into self-repairing stage. It is proved in experiment that the thickness of Ta2O5 shows linear dependence on anodizing voltage V in spite of the variation of jo and Po. This provides a powerful method of controlling the thickness of the film.In self-repairing stage, anodization continues, but anodizing speed is reduced obviously. The process in which anodizing is stopped after current reducing has self-repairing function to thake the quality of film denser and leakage current decrease at least one order.The electric characteristic of anodizing film Ta2O5 is satisfying. Its dielectric constance increases slowly with current densityic at first, then increases suddenly at large current density. The variable inclination of leakage current is the same as e The concentration of citric acid solution has no obviously effect on leakage characteristic of the film. The uniformility of the film is good, its range of variation is ±1. 1%. The configuration of TFT we used is Ta(Al / Ta) / Ta2O5 / SiNx / i / n+a-Si / Al inverted staggered TFT. Its off-current (I(off)) comes up to 67f A, onreurrent (I(on)) 15A, the ratio of on-and off-current is 108. The threshold voltage is approximately 4.9V, field effect mobility μ(fe) comes up to 0.86 cm2 / Vs. It can be used in LC-TV." @default.
- W3149886857 created "2021-04-13" @default.
- W3149886857 creator A5026506670 @default.
- W3149886857 date "1994-01-01" @default.
- W3149886857 modified "2023-09-24" @default.
- W3149886857 title "STUDY OF Ta_2O_5 USED IN DOUBLE-LAYER GATE INSULTOR a-Si TFT" @default.
- W3149886857 hasPublicationYear "1994" @default.
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