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• W3150331577 abstract "This paper describes the influence of Longitudinal Corner Effect (LCE effect) and PArallel Connection of Metal–Oxide–Semiconductor Field-Effect Transistors (MOSFETs) with Different Channel Lengths Effect (PAMDLE effect) of Diamond (hexagonal gate shape) MOSFET in different Complementary Metal-Oxide-Semiconductor (CMOS) Integrated Circuits (ICs) technologies (180nm-Bulk and <inline-formula xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink> <tex-math notation=LaTeX>$1mu text{m}$ </tex-math></inline-formula> -Silicon-On-Insulator, SOI) and in a wide range of high-temperatures (from 300K to 573K). The results have shown (average gains of Diamond MOSFET in relation to standard MOSFET: 60% for saturation drain current, 51% for transconductance, 10% for transconductance-over-drain current ratio etc.) that LCE and PAMDLE effects tend to be similar for CMOS ICs technological nodes used and the different high temperatures. Therefore, we can conclude, for the first time, that LCE and PAMDLE effects are kept active in different CMOS ICs technological nodes and when the Diamond MOSFET is exposed at high temperatures." @default.
• W3150331577 created "2021-04-13" @default.
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• W3150331577 date "2021-01-01" @default.
• W3150331577 modified "2023-10-01" @default.
• W3150331577 title "The Impact of LCE and PAMDLE Regarding Different CMOS ICs Nodes and High Temperatures" @default.
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• W3150331577 doi "https://doi.org/10.1109/jeds.2021.3071399" @default.
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