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- W3150353552 abstract "In this paper, an N-MCT with a low threshold voltage of off-FET has been investigated by simulation and experiment. We have demonstrated the MCT with self-aligned spacer formation and recess process, which results in uniform off-FET channel length. And boron is implanted to adjust the threshold voltage of off-FETs. The threshold voltage of non-doped and proposed MCT was -1.2 V and 0.6 V, respectively. The forward blocking voltage of both MCTs was similar to 1800 V and the turn-on voltage of MCTs was 0.2 V and 0.75 V, respectively. The non-doped and proposed MCTs exhibit the same di/dt around 35.7 kA/㎲ and peak current of 2.69 kA. That is pointed out that this proposed MCT structure is promising because the current driving capability is improved without degradation of on-state characteristics." @default.
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- W3150353552 date "2020-12-31" @default.
- W3150353552 modified "2023-10-10" @default.
- W3150353552 title "Design and Characterization of N-MCT with Low Vth Off-FET for High Current-drive Capability" @default.
- W3150353552 doi "https://doi.org/10.5573/jsts.2020.20.6.533" @default.
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