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- W3150779748 endingPage "92" @default.
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- W3150779748 abstract "Schottky diode with 6H-SiC/MEH-PPV/Al polymer interface was prepared and characterized by using current-voltage data in the temperature range of 80-400K. Important parameters of the produced diode such as ideality factor, barrier height and saturation current were calculated. In addition, the series resistance of the diode was calculated using Cheung and Norde methods. In addition, the calculated diode characteristics were discussed by comparing with each other and with the literature. Strong dependence of the calculated characteristics on temperature has been determined." @default.
- W3150779748 created "2021-04-13" @default.
- W3150779748 creator A5069575260 @default.
- W3150779748 date "2021-03-31" @default.
- W3150779748 modified "2023-10-01" @default.
- W3150779748 title "6H-SiC/MEH-PPV/Al Schottky Diyotunun Geniş Bir Sıcaklık Aralığında Akım-Gerilim Ölçümleri İle Elektriksel Karakterizasyonu" @default.
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- W3150779748 doi "https://doi.org/10.18185/erzifbed.870828" @default.
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