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- W3151261104 abstract "In part I, we have proposed a new capacitance-voltage technique C( V), which is simultaneously based on external ac magnetic field for surface potential modulation and on dc voltage to sweep the gate voltage. In part II, we describe the parameter extractions of vertical double diffusion metal-oxide-semiconductor field effect transistor (VDMOSFET) devices, combining the capacitance characteristics of gate-source, C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GS</sub> ( V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ) and gate-drain C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>GD</sub> ( V <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>G</sub> ), measured using the above cited technique, with those measured conventionally. In doing so, we have been able to extract semiconductor capacitance ( C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>SC</sub> ), interface trap capacitance ( C <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> ), doping profile concentration N( x), and interface trap density D <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>it</sub> ( E) of different regions of VDMOSFET." @default.
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- W3151261104 date "2021-05-01" @default.
- W3151261104 modified "2023-10-06" @default.
- W3151261104 title "Capacitance–Voltage Technique Based on Time Varying Magnetic Field for VDMOSFET—Part II: Measurements and Parameter Extractions" @default.
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- W3151261104 doi "https://doi.org/10.1109/ted.2021.3067634" @default.
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