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- W3151777920 abstract "Ultrathin SiO2 layers on Si (100) wafers were prepared by plasma oxidation at a low temperature (250℃) . The analyses of X-ray photoelectron spectroscopy (XPS) and TEM reveal that the chemical composition of the oxide layer is stoichiometric SiO2 and the SiO2/Si interface is abrupt. The thickness of the ultrathin oxide layer obtained from XPS, capacitance-voltage (C-V) and ellipsometry measurements indicate a nonlinear time dependence. The high frequency C-V characterization of MOS structure shows that the fixed charge density in SiO2film is about 1011 cm-2. It is also shown that the strength of breakdown electrical field of SiO2 film with 6 nm thickness is of the order of 106 Vcm-1 . These properties of the ultrathin SiO2 layer ensure its application in silicon quantum devices." @default.
- W3151777920 created "2021-04-13" @default.
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- W3151777920 date "2002-01-01" @default.
- W3151777920 modified "2023-09-25" @default.
- W3151777920 title "Characterization of ultrathin SiO_2/Si interface grown by low temperature plasma oxidation" @default.
- W3151777920 hasPublicationYear "2002" @default.
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