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- W3152343954 abstract "This article proposes a high-gain and low-power low-noise amplifier (LNA) by adopting a simultaneous noise- and input-matched (SNIM) maximum achievable gain ( G <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> ) core. The G <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> -core is implemented by adjusting the infinite combinations of embedding networks with three passive elements. Based on the proposed two-port noise analysis for implementing the G <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> -core, the input stage G <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> -core can achieve a simultaneous power gain and noise matching. The adoption of the G <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> -core in the input stage can maximize the amount of gain per stage, leading to higher total power gain and lower noise figure (NF). The two-stage 150-GHz LNA adopting the SNIM G <sub xmlns:mml=http://www.w3.org/1998/Math/MathML xmlns:xlink=http://www.w3.org/1999/xlink>max</sub> -core is implemented in a 65-nm CMOS process. The measurement results show a peak gain of 17.9 dB at 152.2 GHz, 3-dB bandwidth of 11 GHz, NF of 4.7 and 6.2 dB at 148 and 150 GHz, respectively, and a peak power added efficiency (PAE) of 7.7% while dissipating only 13.73 mW. This work shows the highest gain per stage and the lowest NF with the lowest dc power consumption among other reported CMOS D-band amplifiers." @default.
- W3152343954 created "2021-04-13" @default.
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- W3152343954 date "2021-05-01" @default.
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- W3152343954 title "A <i>D</i>-Band High-Gain and Low-Power LNA in 65-nm CMOS by Adopting Simultaneous Noise- and Input-Matched <i>G</i> <sub>max</sub>-Core" @default.
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- W3152343954 doi "https://doi.org/10.1109/tmtt.2021.3066972" @default.
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