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- W3153650970 abstract "The effects of hydrogen on dose-rate sensitivity are simulated using a one-dimensional (1-D) model that incorporates the physical mechanisms contributing to dose-rate effects in metal-oxide-semiconductor (MOS) structures. Calculations show that molecular hydrogen cracking at positively charged defects may be a key reaction relating hydrogen and dose rate response. Comparison to experimental data on bipolar devices results in good agreement with the dose rate calculations of interface trap buildup." @default.
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- W3153650970 date "2011-09-01" @default.
- W3153650970 modified "2023-10-16" @default.
- W3153650970 title "Modeling the effects of hydrogen on the mechanisms of dose rate sensitivity" @default.
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- W3153650970 doi "https://doi.org/10.1109/radecs.2011.6131290" @default.
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