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- W3155656332 abstract "In this work, a selector has been proposed with a simple single-layer Graphene/h-BN/Graphene structure. The partial charge density (PCD), DOS and PDOS proved that the Boron vacancies (V b ) conductive filament (CF) is formed when the threshold voltage (V th )is 0.5V, non-linearity (NL) is 104.Then, we found that V b with a concentration of 8.33% at the interface improves the performance of the selector significantly (NL increased by 10 times). This work will be instructive and valuable for the design and optimization of Graphene/h-BN/Graphene selector." @default.
- W3155656332 created "2021-04-26" @default.
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- W3155656332 date "2021-01-01" @default.
- W3155656332 modified "2023-10-16" @default.
- W3155656332 title "First-principles study on the threshold switch selector Graphene/h-BN/Graphene and the improvement of its performance" @default.
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- W3155656332 doi "https://doi.org/10.1109/ecie52353.2021.00009" @default.
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