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- W315635 abstract "This chapter describes the physical mechanisms that may induce the degradation of InGaN-based LEDs. Before going into a detailed description of the main degradation processes, we will give a brief overview on the electrical (current-voltage) characteristics of LEDs, to provide the basic information which is useful to understand the electrical characterization data reported in the subsequent part of the chapter. On the basis of literature data, we will analyze the main mechanisms responsible for current conduction, with focus on tunneling mechanisms, reverse-current conduction, and on the origin of the high ideality factors, always present in InGaN LEDs." @default.
- W315635 created "2016-06-24" @default.
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- W315635 date "2017-01-01" @default.
- W315635 modified "2023-09-27" @default.
- W315635 title "Electrical Properties, Reliability Issues, and ESD Robustness of InGaN-Based LEDs" @default.
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- W315635 doi "https://doi.org/10.1007/978-981-10-3755-9_13" @default.
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