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- W3157404611 abstract "Dopant segregation (DS) technique has been extensively employed to tune Schottky barrier heights (SBHs) of NiSi/Si diodes, either leading to reduced specific contact resistivity ( $rho _{text {c}}$ ) in source/drain (S/D) Ohmic contacts, or enhanced current drivability in Schottky barrier S/D MOSFET (SB-MOSFET) where metallic NiSi is employed as S/D. A capacitance–voltage ( ${C}$ – ${V}$ ) method is usually adopted to reliably extract the SBHs of NiSi/Si for investigating the effectiveness of such a DS technique. In order to avoid large reverse leakage current which rules out the possibility of SBHs extraction during ${C}$ – ${V}$ measurements, dopants with opposite polarity to that in epitaxial Si substrate segregate at the NiSi/Si interface, for instance, boron DS (B DS) for NiSi/n-Si and arsenic DS (As DS) for NiSi/p-Si. This, however, raises one critical question, i.e., NiSi/p+-Si (B DS)/n-Si and NiSi/n+-Si (As DS)/p-Si are p-n or Schottky junctions. In this work, a dedicated circuit is devised to distinguish the type of as-fabricated NiSi/Si diodes with DS based on different switching mechanisms between p-n and Schottky junctions." @default.
- W3157404611 created "2021-05-10" @default.
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- W3157404611 date "2021-06-01" @default.
- W3157404611 modified "2023-09-24" @default.
- W3157404611 title "NiSi/p⁺-Si(n⁺-Si)/n-Si(p-Si) Diodes With Dopant Segregation (DS): p-n or Schottky Junctions?" @default.
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- W3157404611 doi "https://doi.org/10.1109/ted.2021.3075199" @default.
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